Chairpersons
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Lynne Gignac ( IBM T. J. Watson Research Center, USA ) Xiu-Liang Ma ( Chinese Academy of Sciences, China ) |
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Invited
Characterization of Crystal Defects in 4H-SiC bulk and Epitaxial Wafers by Conventional TEM and Atomic-Resolution STEM Techniques
Hidki Sako, Kenji Kobayashi, Kentaro Ohira, Shohei Hayashi, Toshiyuki Isshiki
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Invited
Growth, defects and breakdown in ultrawide-bandgap semiconductors for power electronic devices
David Smith, Prudhvi Peri, Saurabh Vishwakarma, Avani Patel, Houqiang Fu, Kai Fu, Yuji Zhao, Robert Nemanich
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Cu-doped NiO correlation study by light spectroscopy and STEM microscopy
Ahmad Althumali, Ibrahim Aldawood, Adam Kerrigan, Connor Murrill, Biljana Pejova, Ljupco Pejov, Leonardo Lari, Vlado K Lazarov
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Diffusion-induced phase transformation of β-Ga₂O₃ to γ-phase Ga₂O₃-based spinels on (100) MgAl₂O₄
Stephen D. House, Kunyao Jiang, Jingyu Tang, Chengchao Xu, Kelly Xiao, Robert F. Davis, Lisa M. Porter
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Impacts on dopant activation of extended defects and Mg agglomeration in Mg-ion-implanted GaN
Emi Kano, Jun Uzuhashi, Keita Kataoka, Tetsuo Narita, Sierakowski Kacper, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Tetsu Kachi, Nobuyuki Ikarashi
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Robust assessment of local indium concentration in Ga(1-x)InxN quantum wells using quantitative scanning transmission electron microscopy
Daesung Park, Jannik Guckel, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Andreas Hangleiter, Harald Bosse
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